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BT25T120CKR Datasheet, Huajing Microelectronics

BT25T120CKR igbt equivalent, silicon fs trench igbt.

BT25T120CKR Avg. rating / M : 1.0 rating-118

datasheet Download (Size : 250.20KB)

BT25T120CKR Datasheet
BT25T120CKR
Avg. rating / M : 1.0 rating-118

datasheet Download (Size : 250.20KB)

BT25T120CKR Datasheet

Features and benefits

l Trench FS Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ =1.95V @ IC =25A and TC = 25°C l Extremely enhanced avalanche capability.

Application

Power switch circuit of induction cooker(IH). Absolute Maximum Ratings (Tc= 25℃ unless otherwise specified): Symbol.

Description

Using HUAJING's proprietary trench design, advanced FS(field stop) technology and integrated with Free Wheeling Diode, the 1200V Trench FS IGBT offers superior conduction and switching performances, high avalanche ruggedness. VCES IC Ptot (TC=25℃) .

Image gallery

BT25T120CKR Page 1 BT25T120CKR Page 2 BT25T120CKR Page 3

TAGS

BT25T120CKR
Silicon
Trench
IGBT
Huajing Microelectronics

Manufacturer


Huajing Microelectronics

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